A numerical study of partial-SOI LDMOSFETs
نویسندگان
چکیده
The high-voltage and self-heating behavior of partial-SOI (silicon-on-insulator) LDMOSFETs were studied numerically. Different locations of the silicon window were considered to investigate the electrical and thermal effects. It is found that the potential distribution of the partial-SOI LDMOSFET with the silicon window under the drain is similar to that of standard junction isolation devices. With the silicon window under the source the potential distribution is similar to that of the conventional SOI LDMOSFET. Using the two-dimensional numerical simulator MINIMOS-NT, we confirm that the breakdown voltage of partial-SOI LDMOSFETs with a silicon window under the source is higher than that of partial-SOI LDMOSFET with a silicon window under the drain. 2002 Elsevier Science Ltd. All rights reserved.
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